sl02, sl03, sl04 document number 85687 rev. 1.9, 23-jul-10 vishay semiconductors www.vishay.com 1 17249 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diodes features ? for surface mounted applications ? low-profile package ? ideal for automated placement ? low power loss, high efficiency ? high temperature soldering: 260 c/10 s at terminals ? wave and reflow solderable ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: do-219ab (smf) polarity: color band denotes cathode end weight: approx. 15 mg packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 50 k/box gs08/3 k per 7" reel (8 mm tape), 30 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part ordering code marking remarks sl02 sl02-gs18 or sl02-gs08 s2 tape and reel sl03 sl03-gs18 or sl03-gs08 s3 tape and reel sl04 sl04-gs18 or sl04-gs08 s4 tape and reel parameter test condition part symbol value unit maximum repetitive peak reverse voltage sl02 v rrm 20 v sl03 v rrm 30 v sl04 v rrm 40 v maximum rms voltage sl02 v rms 14 v sl03 v rms 21 v sl04 v rms 28 v maximum dc blocking voltage sl02 v dc 20 v sl03 v dc 30 v sl04 v dc 40 v maximum average forward rectified current t tp = 109 c i f(av) 1.1 a peak forward surge current 8.3 ms single half sine-wave i fsm 40 a
www.vishay.com 2 document number 85687 rev. 1.9, 23-jul-10 sl02, sl03, sl04 vishay semiconductors for technical questions with in your region, please c ontact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified note: 1) mounted on epoxy substrate with 3 mm x 3 mm cu pads ( 40 m thick) electrical characteristics t amb = 25 c, unless otherwise specified note: 1) pulse test: 300 s pulse width, 1 % duty cycle parameter test condition symbol value unit thermal resistance junction to ambient air 1) r thja 180 k/w maximum operating junction temperature t j 125 c storage temperature range t stg - 55 to 150 c parameter test condition part symbol min ty p. max unit instaneous forward voltage sl02 v f 0.360 0.385 v i f = 0.5 a 1) sl03 v f 0.395 0.43 v sl04 v f 0.450 0.51 v typical instantaneous forward voltage i f = 1.1 a sl02 v f 0.420 v sl03 v f 0.450 v sl04 v f 0.530 v maximum dc reverse current at rated dc blocking voltage t a = 25 c sl02 i r 250 a t a = 100 c sl02 i r 8ma t a = 25 c sl03 i r 130 a t a = 100 c sl03 i r 6ma t a = 25 c sl04 i r 20 a t a = 100 c sl04 i r 6ma
sl02, sl03, sl04 document number 85687 rev. 1.9, 23-jul-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. forward current derating curve figure 2. typical j unction capacitance figure 3. typical instantaneous fo rward characterisics - sl02 0 10 30 50 70 90 110 130 0 0.5 1.5 1.0 150 lead temperat u re (c) a v erage for w ard c u rrent (a) 17379 12 10 50 100 150 200 250 0 2 4 6 8 10 j u nction capacitance (pf) re v erse v oltage ( v ) sl02 sl04 173 8 0 1 10 0 0.2 0.4 0.6 0. 8 1.0 0.0001 0.001 0.01 0.1 instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) t j = 100 c t j = 50 c t j = 75 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 173 8 1 figure 4. typical reverse current characteristics - sl02 figure 5. typical instantaneous fo rward characteristics - sl03 figure 6. typical reverse current characteristics - sl03 0 5 10 15 1 10 100 1000 10 000 20 25 instantaneo u s re v erse c u rrent ( a) re v erse v oltage ( v ) t j = 100 c t j = 50 c t j = 75 c t j = 25 c 173 8 2 0.2 0.4 0.6 0. 8 1.0 1 10 0 0.0001 0.001 0.01 0.1 instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) t j = 100 c t j = 50 c t j = 75 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 173 8 3 0 5 10 15 1 0.1 10 100 1000 10 000 20 25 30 35 instantaneo u s re v erse c u rrent ( a) re v erse v oltage ( v ) t j = 100 c t j = 50 c t j = 75 c t j = 25 c 173 8 4
www.vishay.com 4 document number 85687 rev. 1.9, 23-jul-10 sl02, sl03, sl04 vishay semiconductors for technical questions with in your region, please c ontact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches) : do-219ab foot print re commendation: re v . 3 - date: 13. march 2007 doc u ment no.:s 8 - v -3915.01-001 (4) 1.3 (0.051) 1.3 (0.051) 2.9 (0.114) 1.4 (0.055) 2.9 (0.114) 2.7 (0.106) 3.9 (0.154) 3.5 (0.13 8 ) 0. 8 5 (0.033) 0.35 (0.014) 1.2 (0.047) 0. 8 (0.031) 1.9 (0.075) 1.7 (0.067) 1.0 8 (0.043) 0. 88 (0.035) 0.25 (0.010) 0.05 (0.002) 0.1 (0.004) 0 (0.000) 5 5 created - date: 15. fe b r u ary 2005 17247 detail z enlarged
sl02, sl03, sl04 document number 85687 rev. 1.9, 23-jul-10 vishay semiconductors www.vishay.com 5 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com blistertape dimens ions for smf in millimeters 1 8 513 ps doc u ment- n o.: s 8 - v -3717.02-001 (3)
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